<p><i>CMOS Past, Present and Future</i> provides insight from the basics, to the state-of-the-art of CMOS processing and electrical characterization, including the integration of Group IV semiconductors-based photonics. The book goes into the pitfalls and opportunities associated with the use of hetero-epitaxy on silicon with strain engineering and the integration of photonics and high-mobility channels on a silicon platform. It begins with the basic definitions and equations, but extends to present technologies and challenges, creating a roadmap on the origins of the technology and its evolution to the present, along with a vision for future trends.</p> <p>The book examines the challenges and opportunities that materials beyond silicon provide, including a close look at high-k materials and metal gate, strain engineering, channel material and mobility, and contacts. The book's key approach is on characterizations, device processing and electrical measurements.</p>

CMOS Past, Present and Future (Woodhead Publishing Series in Electronic and Optical Materials)

Engineering & Transportation

Zhao, Chao

Simoen, Eddy

Radamson, Henry

Luo, Jun

Engineering

Woodhead Publishing

<p>Following their first observation in small area silicon MOSFETs in 1984, random telegraph signals (RTS) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. However, as devices move to the nanometer scale, particularly memory devices and logic circuits, and in the development of alternatives to silicon MOSFETS, RTS have become an issue of major concern to the semiconductor industry. Moreover, following the move to the nanoscale, the devices will become more susceptible to single-trap random telegraph signal effects. It is clear that the successors to planar silicon transistors, including nanowire devices, tunnel field effect transistors, and carbon nanotubes are equally sensitive or even more so than current CMOS devices.</p> <p>It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single trap phenomema, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTS to applied technology.</p>

Random Telegraph Signals in Semiconductor Devices (Iop Expanding Physics)

IOP Publishing Ltd.

<p><div>This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices' performance. Several control and possible gettering approaches are addressed.</div> <div>&nbsp;</div> <div>The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.</div></p>

Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact (Springer Series in Materials Science, 270)

Computers & Technology

Claeys, Cor

Networking & Cloud Computing

Springer

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

<p>The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control.</p>

Extended Defects in Germanium: Fundamental and Technological Aspects (Springer Series in Materials Science, 118)

Science & Math

Physics

The first part of this overview on extended defects in Germanium covers fundamentals, describing crystallographic structure and other physical and electrical properties. The second part treats the extended defects during wafer and device processing.

Mathematics

See the best price to sell, buy, or rent books by Simoen, Eddy. BookScouter helps to compare book prices from 25+ online bookstores and 30+ buyback vendors with a single search.

Books by Simoen, Eddy

See the best price to sell, buy, or rent books by Simoen, Eddy. BookScouter helps to compare book prices from 25+ online bookstores and 30+ buyback vendors with a single search.

CMOS Past, Present and Future (Woodhead Publishing Series in Electronic and Optical Materials)

Random Telegraph Signals in Semiconductor Devices (Iop Expanding Physics)

Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact (Springer Series in Materials Science, 270)

Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact (Springer Series in Materials Science, 270)

Extended Defects in Germanium: Fundamental and Technological Aspects (Springer Series in Materials Science, 118)

Extended Defects in Germanium: Fundamental and Technological Aspects (Springer Series in Materials Science, 118)