<p><div>This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices' performance. Several control and possible gettering approaches are addressed.</div> <div>&nbsp;</div> <div>The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.</div></p>

Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact (Springer Series in Materials Science, 270)

Computers & Technology

Claeys, Cor

Simoen, Eddy

Networking & Cloud Computing

Springer

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

<p>The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control.</p>

Extended Defects in Germanium: Fundamental and Technological Aspects (Springer Series in Materials Science, 118)

Science & Math

Physics

The first part of this overview on extended defects in Germanium covers fundamentals, describing crystallographic structure and other physical and electrical properties. The second part treats the extended defects during wafer and device processing.

Mathematics

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Books by Claeys, Cor

See the best price to sell, buy, or rent books by Claeys, Cor. BookScouter helps to compare book prices from 25+ online bookstores and 30+ buyback vendors with a single search.

Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact (Springer Series in Materials Science, 270)

Metal Impurities in Silicon- and Germanium-Based Technologies: Origin, Characterization, Control, and Device Impact (Springer Series in Materials Science, 270)

Extended Defects in Germanium: Fundamental and Technological Aspects (Springer Series in Materials Science, 118)

Extended Defects in Germanium: Fundamental and Technological Aspects (Springer Series in Materials Science, 118)