SOLID STATE DEVICE PHYSICS

The Physics and 5 experiments of some electronic devices are documented in this book like never before (to our knowledge). The experiments are on room temperature I-V characteristics of npn Bipolar Junction Transistor (BJT) C828 in Common Base (CB) and in Common Emitter (CE) configurations, and of n channel Junction Field Effect transistor (n-JFET) 2N 5457 in Common Source configuration. The other 2 experiments are on design and construction of Common Emitter Amplifier using npn BJT with voltage divider bias and on temperature dependent I-V characteristics of an undoped bulk bar of semiconductor crystal. The book will be a great aid in teaching and learning of undergraduate students of Physics major.