Characterization of Wide Bandgap Power Semiconductor Devices (Energy Engineering)
Description:
At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection.
Characterization of Wide Bandgap Power Semiconductor Devices presents comprehensive methods with examples for the characterization of this important class of power devices. After an introduction, the book covers pulsed static characterization; junction capacitance characterization; fundamentals of dynamic characterization; gate drive for dynamic characterization; layout design and parasitic management; protection design for double pulse test; measurement and data processing for dynamic characterization; cross-talk consideration; impact of three-phase system; and topology considerations.
Low Price Summary
Top Bookstores
DISCLOSURE: We're an eBay Partner Network affiliate and we earn commissions from purchases you make on eBay via one of the links above.
Want a Better Price Offer?
Set a price alert and get notified when the book starts selling at your price.
Want to Report a Pricing Issue?
Let us know about the pricing issue you've noticed so that we can fix it.