* Examines the various methods available for circuit protection, including coverage of the newly developed ESD circuit protection schemes for VLSI circuits. * Provides guidance on the implementation of circuit protection measures. * Includes new sections on ESD design rules, layout approaches, package effects, and circuit concepts. * Reviews the new Charged Device Model (CDM) test method and evaluates design requirements necessary for circuit protection.

ESD in Silicon Integrated Circuits

Engineering & Transportation

Amerasekera, E. Ajith

Duvvury, Charvaka

Engineering

wiley

Esd in Silicon Integrated Circuits Ajith Amerasekera Charvaka Duvvury Texas Instruments Inc, Dallas, USA Electrostatic Discharge (ESD) effects in silicon integrated circuits have become a major concern as today's high circuit density technologies shrink to sub-micro dimensions. This book provides an understanding of the basic features related to ESD and deals with topics ranging from the physics of devices operating under ESD conditions to approaches for solving and improving ESD performance in advanced ICs. Features include: * Description of the methods used to reproduce ESD-type events in a controlled test environment * Analysis of the behavior of different semiconductor devices under ESD conditions, including the physics and modeling of devices * Detailed study of design and layout requirements for ESD protection circuits * Case studies showing examples of approaches to solving ESD design problems, including failure analysis Covering the state-of-the-art in circuit design for ESD prevention, this practical book is written from an industrial perspective and will appeal to engineers and scientists working in the fields of IC and transistor design. Researchers and advanced students in the fields of device/circuit modeling and semiconductor reliability, seeking to understand the fundamentals of ESD phenomena, will also find this book an invaluable reference source.

Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields.

Modeling of Electrical Overstress in Integrated Circuits (The Springer International Series in Engineering and Computer Science, 289)

Sung-Mo (Steve) Kang

Diaz, Carlos H.

Springer

Modeling of Electrical Overstress in Integrated Circuits (The Springer International Series in Engineering and Computer Science)

Diaz, Carlos H. H.

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