Semiconductor Heterostructure (Japanese Technology Review)

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Semiconductor Heterostructure (Japanese Technology Review) image
ISBN-10:

288124338X

ISBN-13:

9782881243387

Edition: 1
Released: Jan 01, 1989
Publisher: Routledge
Format: Hardcover, 0 pages

Description:

A highly technical treatment of specialized transistors. Abe examines high electron mobility transistors, detailing their physical principles, operational characteristics, and analog and digital applications. Yokoyama describes some resonant tunnelling devices: hot electron and bipolar transistors, and barriers using InGaAs-based material. Both authors are from Fujitsu Laboratories Ltd. in Atsugi, Japan. A very small book for the price, and on acid paper as well. Annotation copyrighted by Book News, Inc., Portland, OR

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